矽源特MXN3384是VDS=20V，ID=6A，@VGS=4.5V，的Dual N-Channe MOSFET.
矽源特MXN3384概述：
矽源特MXN3384是VDS=20VMXC，ID=6A，@VGS=4.5V，RDS(ON)(Typ.)=12.5m?，@VGS=3.8V，RDS(ON)(Typ.)=13m?，@VGS=2.5V，RDS(ON)(Typ.)=16.5m?的Dual N-Channe MOSFET.
矽源特MXN3384提供DFN3x3-8L封装.
The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.
矽源特MXN3384特性：
VDS =20VMXC，ID =6A
@VGS=4.5V RDS(ON)(Typ.)=12.5m?
@VGS=3.8V RDS(ON)(Typ.)=13m?
@VGS=2.5V RDS(ON)(Typ.)=16.5m?
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
矽源特MXN3384应用：
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
矽源特MXN3384典型应用及引脚图：
标签： MXN3384 Channe MOSFET Dual VDS
矽源特MX2808是VDS=20V，ID=7A，@VGS=4.5V，RDS(ON)=14.5mΩ的N沟道MOSFET.
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